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| PD- 91335D IRLR/U2703 HEXFET(R) Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR2703) Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V G S RDS(on) = 0.045 ID = 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak TO-252AA I-Pak TO-251AA Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 23 16 96 45 0.30 16 77 14 4.5 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient Typ. --- --- --- Max. 3.3 50 110 Units C/W ** When mounted on 1" square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 7/30/03 IRLR/U2703 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Min. Typ. Max. Units Conditions 30 --- --- V VGS = 0V, ID = 250A --- 0.030 --- V/C Reference to 25C, ID = 1mA --- --- 0.045 VGS = 10V, ID = 14A --- --- 0.065 VGS = 4.5V, ID = 12A 1.0 --- --- V VDS = VGS, ID = 250A 6.4 --- --- S VDS = 25V, ID = 14A --- --- 25 VDS = 30V, VGS = 0V A --- --- 250 VDS = 24V, VGS = 0V, TJ = 150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V --- --- 15 ID = 14A --- --- 4.6 nC VDS = 24V --- --- 9.3 VGS = 4.5V, See Fig. 6 and 13 --- 8.5 --- VDD = 15V --- 140 --- ID = 14A ns --- 12 --- RG = 12, VGS = 4.5V --- 20 --- RD = 1.0, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 450 --- VGS = 0V --- 210 --- pF VDS = 25V --- 110 --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 23 showing the A G integral reverse --- --- 96 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 14A, VGS = 0V --- 65 97 ns TJ = 25C, IF = 14A --- 140 210 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 15V, starting TJ = 25C, L =570H RG = 25, IAS = 14A. (See Figure 12) ISD 14A, di/dt 140A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. Uses IRL2703 data and test conditions. junction temperature; Package limitation current = 20A. 2 www.irf.com IRLR/U2703 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 10 1 1 2.5V 2.5V 0.1 0.1 1 20s PULSE WIDTH T J = 25C 10 A 100 0.1 0.1 20s PULSE WIDTH T J = 175C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 I D , Drain-to-Source Current (A) TJ = 25C TJ = 175C 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D =23A 24A 1.5 1.0 1 0.5 0.1 2 3 4 5 6 V DS= 15V 20s PULSE WIDTH 7 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U2703 1000 VGS , Gate-to-Source Voltage (V) 800 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 15 I D = 14A V DS = 24V V DS = 15V 12 C, Capacitance (pF) Ciss 600 Coss 9 400 6 Crss 200 3 0 1 10 100 A 0 0 4 8 FOR TEST CIRCUIT SEE FIGURE 13 12 16 20 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175C TJ = 25C 10 I D , Drain Current (A) 100 10s 100s 10 1ms 1 0.4 0.8 1.2 1.6 VGS = 0V 2.0 A 1 1 TC = 25C TJ = 175C Single Pulse 10 10ms 2.4 A 100 V SD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLR/U2703 25 LIMITED BY PACKAGE V DS VGS RD 20 ID , Drain Current (A) RG 4.5V Pulse Width 1 s Duty Factor 0.1 % D.U.T. + -VDD 15 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (ZthJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 P DM SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t t 1 t2 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C A 1 0.0001 0.001 0.01 0.1 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLR/U2703 EAS , Single Pulse Avalanche Energy (mJ) 160 TOP BOTTOM 120 15V ID 5.7A 9.9A 14A VDS L DRIVER 80 RG 20V D.U.T IAS tp + V - DD A 0.01 40 Fig 12a. Unclamped Inductive Test Circuit 0 VDD = 15V 25 50 75 100 125 150 A 175 V(BR)DSS tp Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLR/U2703 Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLR/U2703 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 3 0.51 (.020) MIN. 10.42 (.410) 9.40 (.370) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN -B1.52 (.060) 1.15 (.045) 3X 2X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 (.010) M AMB NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 4.57 (.180) 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 0.58 (.023) 0.46 (.018) 2.28 (.090) Part Marking Information TO-252AA (D-PARK) EXAMPLE : THIS IS AN IRFR120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO A IRFR 120 9U 1P FIRST PORTION OF PART NUMBER ASSEMBLY LOT CODE SECOND PORTION OF PART NUMBER 8 www.irf.com IRLR/U2703 Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) -A5.46 (.215) 5.21 (.205) 4 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 0.58 (.023) 0.46 (.018) LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 6.45 (.245) 5.68 (.224) 1.52 (.060) 1.15 (.045) 1 -B2.28 (.090) 1.91 (.075) 9.65 (.380) 8.89 (.350) 2 3 6.22 (.245) 5.97 (.235) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-252AA. 4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP, SOLDER DIP MAX. +0.16 (.006). 3X 1.14 (.045) 0.76 (.030) 3X 0.89 (.035) 0.64 (.025) M AMB 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 2.28 (.090) 2X 0.25 (.010) Part Marking Information TO-251AA (I-PARK) EXAMPLE : THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO IRFU 120 9U 1P FIRST PORTION OF PART NUMBER ASSEMBLY LOT CODE SECOND PORTION OF PART NUMBER www.irf.com 9 IRLR/U2703 Tape & Reel Information TO-252AA Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/03 10 www.irf.com |
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